BAS116GW diode equivalent, low leakage switching diode.
* High switching speed: trr = 0.8 µs
* Low leakage current: IR = 3 pA
* Repetitive peak reverse voltage VRRM ≤ 85 V
* Low capacitance: Cd = 2 pF
* Sma.
* Low-leakage current applications
* General-purpose switching
4. Quick reference data
Table 1. Quick referenc.
Low leakage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
* High switching speed: trr = 0.8 µs
* Low leakage current: IR = 3 pA
* Repetitive peak reverse voltage V.
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