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2N7002BKW - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Logic-level compatible.
  • Very fast switching.
  • Trench MOSFET technology.
  • ESD protection up to 2 kV.
  • AEC-Q101 qualified 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N7002BKW 60 V, 310 mA N-channel Trench MOSFET 17 October 2024 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD protection up to 2 kV • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.