2N7002
description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Suitable for logic level gate drive sources
- Very fast switching
- Surface-mounted package
- Trench MOSFET technology
1.3 Applications
- Logic level translators
- High-speed line drivers
1.4 Quick reference data
Table 1. Symbol VDS ID
Quick reference data Parameter drain-source voltage drain current
Ptot total power dissipation
Static characteristics
RDSon drain-source on-state resistance
Conditions 25 °C ≤ Tj ≤ 150 °C VGS = 10 V; Tsp = 25 °C; see Figure 1; see Figure 3 Tsp = 25 °C; see Figure 2
VGS = 10 V; ID = 500 m A; Tj = 25 °C; see Figure 6; see Figure 8
2. Pinning information
Min Typ Max Unit
- - 60 V
- - 300 m A
- - 0.83 W
- 2.8 5
Ω
Table 2. Pin 1 2 3
Pinning information Symbol Description
G gate S source D drain
Simplified outline
SOT23 (TO-236AB)
Graphic symbol
G mbb076 S
Nexperia
60 V, 300 m A...
