NP3416BEMR datasheet, mosfet equivalent, natlinear

Features and benefits

* VDS =20V，ID =4A RDS(ON)(Typ.)=18.5mΩ @VGS=4.5V RDS(ON)(Typ.)=23.3mΩ @VGS=2.5V
* High power and current handing capability
* Lead free product is acquired

Application

General Features
* VDS =20V，ID =4A RDS(ON)(Typ.)=18.5mΩ @VGS=4.5V RDS(ON)(Typ.)=23.3mΩ @VGS=2.5V
* High power .

Description

Schematic diagram The NP3416BEMR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Featur.

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