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NP3407VR - 30V P-Channel Enhancement Mode MOSFET

General Description

The NP3407VR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS =-30V，ID =-4A RDS(ON)(Typ. )=45mΩ @VGS=-10V RDS(ON)(Typ. )=62mΩ @VGS=-4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment.

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Datasheet Details

Part number NP3407VR
Manufacturer natlinear
File Size 728.83 KB
Description 30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP3407VR Datasheet

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NP3407VR 30V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP3407VR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features  VDS =-30V，ID =-4A RDS(ON)(Typ.)=45mΩ @VGS=-10V RDS(ON)(Typ.)=62mΩ @VGS=-4.