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NP34N055HLE - N-Channel Power MOSFET

Description

These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 22 mΩ MAX. (VGS = 5 V, ID = 17 A).
  • Low Ciss : Ciss = 2000 pF TYP.
  • Built-in gate protection diode NP34N055ILE Note NP34N055SLE Note Not for new design. TO-252 (JEITA) / MP-3Z TO-252 (JEDEC) / MP-3ZK (TO-251).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HLE, NP34N055ILE, NP34N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP34N055HLE TO-251 (JEITA) / MP-3 FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 22 mΩ MAX. (VGS = 5 V, ID = 17 A) • Low Ciss : Ciss = 2000 pF TYP. • Built-in gate protection diode NP34N055ILE Note NP34N055SLE Note Not for new design.
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