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NP34N055IHE - N-Channel Power MOSFET

This page provides the datasheet information for the NP34N055IHE, a member of the NP34N055HHE N-Channel Power MOSFET family.

Datasheet Summary

Description

These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on) = 19 m Ω MAX. (VGS = 10 V, I D = 17 A).
  • Low Ciss : Ciss = 1600 pF TYP.
  • Built-in gate protection diode.

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Datasheet preview – NP34N055IHE

Datasheet Details

Part number NP34N055IHE
Manufacturer NEC
File Size 260.05 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NP34N055IHE Datasheet
Additional preview pages of the NP34N055IHE datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HHE, NP34N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER NP34N055HHE NP34N055IHE PACKAGE TO-251 TO-252 DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 19 m Ω MAX. (VGS = 10 V, I D = 17 A) • Low Ciss : Ciss = 1600 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 (TO-251) 55 ±20 ±34 V V A A W W A mJ °C °C (TO-252) VDSS VGSS ID(DC) ID(pulse) PT PT IAS EAS Tch Tstg DataShee DataSheet4U.
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