NP3409MR mosfet equivalent, 30v p-channel enhancement mode mosfet.
* VDS =-30V，ID =-6A RDS(ON)(Typ.)=29mΩ @VGS=-10V RDS(ON)(Typ.)=59mΩ @VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired
General Features
* VDS =-30V，ID =-6A RDS(ON)(Typ.)=29mΩ @VGS=-10V RDS(ON)(Typ.)=59mΩ @VGS=-4.5V
* High power an.
Schematic diagram
The NP3409MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
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