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NP3409MR - 30V P-Channel Enhancement Mode MOSFET

General Description

The NP3409MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS =-30V，ID =-6A RDS(ON)(Typ. )=29mΩ @VGS=-10V RDS(ON)(Typ. )=59mΩ @VGS=-4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number NP3409MR
Manufacturer natlinear
File Size 270.64 KB
Description 30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP3409MR Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NP3409MR 30V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP3409MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features  VDS =-30V，ID =-6A RDS(ON)(Typ.)=29mΩ @VGS=-10V RDS(ON)(Typ.)=59mΩ @VGS=-4.