* N-channel： VDS =18V,ID =2A RDS(ON)=47mΩ (typical) @ VGS=4.5V RDS(ON)=57mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V,ID =-1.8A RDS(ON)=137mΩ (typical) @ VGS=-4.5V R.

N-channel P-channel G1 D1 General Features
* N-channel： VDS =18V,ID =2A RDS(ON)=47mΩ (typical) @ VGS=4.5V RDS.

Schematic diagram The NP1804MR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a H-Bridge, and for a host of other applications. N-channel P-channel G1 D1 General.

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