NP180N04TUJ datasheet, transistor equivalent, Renesas

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Features and benefits

* Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A)
* Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V)
* Designed for automotive application a.

Application

Features
* Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A)
* Low Ciss: Ciss = 9500 pF T.

Description

The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A)
* Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V)
* D.

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