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NP100N055PUK Datasheet, Renesas

NP100N055PUK transistor equivalent, mos field effect transistor.

NP100N055PUK Avg. rating / M : 1.0 rating-12

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NP100N055PUK Datasheet

Features and benefits


* Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)
* Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)
* Designed for automotive applicat.

Application

Features
* Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)
* Low Ciss: Ciss = 4900.

Description

The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)
* Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) <.

Image gallery

NP100N055PUK Page 1 NP100N055PUK Page 2 NP100N055PUK Page 3

TAGS

NP100N055PUK
MOS
FIELD
EFFECT
TRANSISTOR
Renesas

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