NP100P02D6 mosfet equivalent, 20v p-channel enhancement mode mosfet.
* VDS =-20V，ID =-100A RDS(ON)(Typ.)=2.5mΩ @VGS=-4.5V RDS(ON)(Typ.)=3mΩ @VGS=-2.5V
* High power and current handing capability
* Lead free product is acquired .
General Features
* VDS =-20V，ID =-100A RDS(ON)(Typ.)=2.5mΩ @VGS=-4.5V RDS(ON)(Typ.)=3mΩ @VGS=-2.5V
* High power.
Schematic diagram
The NP100P02D6 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications
General Features
* VDS =-20V，ID =-100A RDS(ON)(Typ.)=2.5mΩ @VGS=-4.5V RDS(ON.
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