NP100P06PDG Overview
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
NP100P06PDG Key Features
- Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V,
- Low input capacitance : Ciss = 15000 pF Typ
- Designed for automotive application and AEC-Q101 qualified
- Pb-free (This product does not contain Pb in the external electrode)
