LN2307 transistor equivalent, p-channel enhancement mode field effect transistor.
* Super high dense cell design for low RDS(ON)
* Rugged and reliable
* Simple drive requirement
* SOT-23-3L/B package
* Package
* SOT-23-3L/B
3
D.
VDSS -20V
Product Summary ID
-0.45A -0.35A
RDS(ON)(mΩ)TYP 300 @ VGS=-4.5V 450 @ VGS=-2.5V
* Features
* Super high dense cell design for low RDS(ON)
* Rugged and reliable
* Simple drive requirement
* SOT-23-3L/B package
* Pa.
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