LN2306 transistor equivalent, n-channel enhancement mode field effect transistor.
* Super high dense cell design for low RDS(ON)
* Rugged and reliable
* Simple drive requirement
* SOT-23-3B package
* Package
* SOT-23-3B
3
D
D
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VDSS 20V
Product Summary ID
0.65A 0.55A
RDS(ON)(mΩ)TYP 130 @ VGS= 4.5V 160 @ VGS= 2.5V
LN2306
* Features
* Super high dense cell design for low RDS(ON)
* Rugged and reliable
* Simple drive requirement
* SOT-23-3B package
*.
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