LN2300 transistor equivalent, n-channel enhancement mode field effect transistor.
* Super high dense cell design for low RDS(ON)
* Rugged and reliable
* Simple drive requirement
* SOT-23-3L/B package
* Package
* SOT-23-3L/B
3
D.
VDSS 20V
Product Summary ID
3.6A
RDS(ON)(mΩ)TYP 33 @ VGS= 4.5V 52 @ VGS= 2.5V
LN2300
* Features
* Super high dense cell design for low RDS(ON)
* Rugged and reliable
* Simple drive requirement
* SOT-23-3L/B package
* Packag.
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