LN2302ALT1G mosfet equivalent, 20v n-channel enhancement-mode mosfet.
* RDS(ON)≦85mΩ@VGS=4.5V
* RDS(ON)≦115mΩ@VGS=2.5V
* RDS(ON)≦135mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-.
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
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* Power Ma.
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