LMG3411R050 stage equivalent, integrated gan fet power stage.
*1 TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles
* Enables high density power conversion designs
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* High density industrial and consumer power supplies
* Multi-level converters
* Solar inverters
* Indus.
The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input.
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