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LMG3411R150, LMG3410R150
SNOSD91B – MARCH 2019 – REVISED FEBRUARY 2020
LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection
1 Features
•1 TI GaN process qualified through accelerated reliability in-application hard-switching profiles
• Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and layout – Adjustable drive strength for switching performance and EMI control – Digital fault status output signal – Only +12 V of unregulated supply needed
• Integrated gate driver – Zero common source inductance – 20-ns propagation delay for high-frequency design – Trimmed gate
LMG3410R150 Datasheet
