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LMG3411R070 - GaN

Download the LMG3411R070 datasheet PDF. This datasheet also covers the LMG3410R070 variant, as both devices belong to the same gan family and are provided as variant models within a single manufacturer datasheet.

General Description

The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

Key Features

  • 1 TI GaN Process Qualified Through Accelerated Reliability In-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LMG3410R070-etcTI.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by Texas Instruments

Part Number Description
LMG3411R050 Integrated GaN Fet Power Stage
LMG3411R150 GaN FET
LMG3410R050 Integrated GaN Fet Power Stage
LMG3410R070 GaN
LMG3410R150 GaN FET
LMG3422R030 GaN FET
LMG3426R030 GaN FET
LMG3522R030 GaN FET
LMG3526R030 GaN FET
LMG3626 GaN FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Folder Order Now Technical Documents Tools & Software Support & Community LMG3410R070, LMG3411R070 SNOSD10F – APRIL 2016 – REVISED MAY 2020 LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features •1 TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout – Adjustable Drive Strength for Switching Performance and EMI Control – Digital Fault Status Output Signal – Only +12 V Unregulated Supply Needed • Integrated Gate Driver – Zero Common Source Inductance – 20 ns Propagation Delay for MHz Operation – Process-tuned Gate Bias Volt