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LMG3626 - GaN FET

General Description

The LMG3626 is a 650-V 270-mΩ GaN power FET intended for switch-mode power-supply applications.

The LMG3626 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control.

Key Features

  • 650-V 270-mΩ GaN power FET.
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control.
  • Current-sense emulation with high bandwidth and high accuracy.
  • Cycle-by-cycle overcurrent protection.
  • Overtemperature protection with FLT pin reporting.
  • AUX quiescent current: 240 μA.
  • AUX standby quiescent current: 50 μA.
  • Maximum supply and input logic pin voltage: 26 V.
  • 8 mm × 5.3 mm QFN package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMG3626 SLUSFB8A – SEPTEMBER 2023 – REVISED NOVEMBER 2023 LMG3626 650-V 270-mΩ GaN FET With Integrated Driver and Current-Sense Emulation 1 Features • 650-V 270-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting • AUX quiescent current: 240 μA • AUX standby quiescent current: 50 μA • Maximum supply and input logic pin voltage: 26 V • 8 mm × 5.