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LMG3426R030 - GaN FET

Download the LMG3426R030 datasheet PDF. This datasheet also covers the LMG3422R030 variant, as both devices belong to the same gan fet family and are provided as variant models within a single manufacturer datasheet.

General Description

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns.

Key Features

  • Qualified for JEDEC JEP180 for hard-switching topologies.
  • 600V GaN-on-Si FET with integrated gate driver.
  • Integrated high precision gate bias voltage.
  • 200V/ns FET hold-off.
  • 2.2MHz switching frequency.
  • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation.
  • Operates from 7.5V to 18V supply.
  • Robust protection.
  • Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100n.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LMG3422R030-etcTI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Texas Instruments

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LMG3422R030 GaN FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LMG3422R030, LMG3426R030 SNOSDA7E – SEPTEMBER 2020 – REVISED FEBRUARY 2024 LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2.2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.