z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode z Diode is Characterized.

in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits w.

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation .

CJV01N65B

CJV0160

CJ1

CJ1012

CJ1012-G

CJ1117

CJ1G-CPU42P

CJ1G-CPU43P

CJ1G-CPU44P

CJ1G-CPU45P

CJ1H-CPU64H-R

CJ1H-CPU65H-R

CJ1H-CPU66H-R

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