JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate MOSFETS
CJ1012 N-Channel Power MOSFET
V(BR)DSS
20 V
RDS(on)MAX
700mΩ@4.5V
850mΩ@2.5V
ID
500mA
General Description
This Single N-Channel MOSFET has been designed using advanced
Power Trench process to optimize the RDS(ON).
SOT-523
1. GATE
2. SOURCE
3. DRAIN
1
3
2
FEATURE
High-Side Switching
Low On-Resistance
Low Threshold
Fast Switching Speed
ESD protected
MARKING
APPLICATIONS
Drivers:Relays, Solenoids, Lamps,
Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Equivalent Circuit
C= Device Code
Solid dot = Green molding compound device,if none,
the normal device.
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current -Pulsed(note1)
Power Dissipation (note 2 , Ta=25℃)
Maximum Power Dissipation (note 3 , Tc=25℃)
Thermal Resistance from Junction to Ambient
Thermal Resistance from Junction to Case
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
ID(DC)
IDM(pulse)
PD
RθJA
RθJC
Tj
Tstg
www.cj-elec.com
1
Value
20
±12
500
1000
150
275
833
455
150
-55 ~+150
Unit
V
mA
mW
℃/W
℃
C,Apr,2016
