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Comchip

CJ1012-G Datasheet Preview

CJ1012-G Datasheet

MOSFET

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MOSFET
CJ1012-G
N-Channel
RoHS Device
Features
- High-Side Switching.
- Low On-Resistance.
- Low Threshold.
- Fast Switching Speed.
- ESD protected up to 2KV.
Mechanical data
- Case: SOT-323, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
Circuit Diagram
G1
S2
3D
G : Gate
S : Source
D : Drain
SOT-523
0.067(1.70)
0.059(1.50)
3
0.035(0.90)
0.028(0.70)
1
0.020(0.50)TYP.
2
0.043(1.10)
0.035(0.90)
0.014(0.35)
0.010(0.25)
0.008(0.20)
0.004(0.10)
0.069(1.75)
0.057(1.45)
0.018(0.46)
0.010(0.26)
0.031(0.80)
0.028(0.70)
0.010(0.25)
0.006(0.15)
0.004(0.10) max
Dimensions in inches and (millimeter)
Maximum Rating (at Ta=25°C unless otherwise noted)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current-continuous
Drain Current-pulsed (note1)
VDSS
VGS
ID(DC)
IDM(pulse)
Power dissipation (note2, TA=25°C)
Max. Power dissipation (note3, TC=25°C)
PD
Thermal resistance from junction to ambient
Thermal resistance from junction to case
Junction temperature
Storage temperature
RθJA
RθJC
TJ
TSTG
Value
20
±12
500
1000
150
275
833
455
150
-55 to +150
Unit
V
V
mA
mA
mW
°C/W
°C/W
°C
°C
QW-BTR44
Company reserves the right to improve product design , functions and reliability without notice.
Comchip Technology CO., LTD.
REV:A
Page 1




Comchip

CJ1012-G Datasheet Preview

CJ1012-G Datasheet

MOSFET

No Preview Available !

MOSFET
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
On/Off States
Drain-source breakdown voltage
V(BR) DSS VGS =0V , ID=250µA
Gate-threshold voltage
VGS(th)
VDS =VGS , ID=250µA
Gate-body leakage current
IGSS
VDS =0V , VGS=±4.5V
Zero gate voltage drain current
IDSS
VDS =16V , VGS=0V
Drain-source on-state resistance
Forward transconductance
RDS(on)
gFS
VGS=4.5V , ID=600mA
VGS=2.5V , ID=500mA
VDS=10V , ID=400mA
Dynamic Characteristics
Input capacitance (note 4)
Output capacitance (note 4)
Reverse transfer capacitance (note 4)
ciss
Coss
Crss
VDS=16V , VGS=0V,
f=1MHZ
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs
VDS=10V , VGS=4.5V,
ID=250mA
Qgd
Switching Times (note 4)
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
VDD=10V , ID=200mA
RL=47Ω ,
VGS=4.5V , RG=10Ω
Drain-source diode characteristics
Drain-source diode forward voltage (note 5) VSD IS=0.15A , VGS=0V
Notes:
1. Repetitive rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at Ta=25°C.
3. This test is performed with infinite heat sink at Tc=25°C.
4. These parameters have no way to verify.
5. Pulse test: Pulse width300µs, Duty cycle0.5%.
Min Typ Max Units
20 V
0.45 1.2 V
±1 µA
100 nA
700
mΩ
850
1S
100
16 pF
12
750
75 nC
225
5
5
nS
25
11
1.2 V
QW-BTR44
Company reserves the right to improve product design , functions and reliability without notice.
Comchip Technology CO., LTD.
REV:A
Page 2


Part Number CJ1012-G
Description MOSFET
Maker Comchip
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