MOSFET
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
On/Off States
Drain-source breakdown voltage
V(BR) DSS VGS =0V , ID=250µA
Gate-threshold voltage
VGS(th)
VDS =VGS , ID=250µA
Gate-body leakage current
IGSS
VDS =0V , VGS=±4.5V
Zero gate voltage drain current
IDSS
VDS =16V , VGS=0V
Drain-source on-state resistance
Forward transconductance
RDS(on)
gFS
VGS=4.5V , ID=600mA
VGS=2.5V , ID=500mA
VDS=10V , ID=400mA
Dynamic Characteristics
Input capacitance (note 4)
Output capacitance (note 4)
Reverse transfer capacitance (note 4)
ciss
Coss
Crss
VDS=16V , VGS=0V,
f=1MHZ
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs
VDS=10V , VGS=4.5V,
ID=250mA
Qgd
Switching Times (note 4)
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
VDD=10V , ID=200mA
RL=47Ω ,
VGS=4.5V , RG=10Ω
Drain-source diode characteristics
Drain-source diode forward voltage (note 5) VSD IS=0.15A , VGS=0V
Notes:
1. Repetitive rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at Ta=25°C.
3. This test is performed with infinite heat sink at Tc=25°C.
4. These parameters have no way to verify.
5. Pulse test: Pulse width≤300µs, Duty cycle≤0.5%.
Min Typ Max Units
20 V
0.45 1.2 V
±1 µA
100 nA
700
mΩ
850
1S
100
16 pF
12
750
75 nC
225
5
5
nS
25
11
1.2 V
QW-BTR44
Company reserves the right to improve product design , functions and reliability without notice.
Comchip Technology CO., LTD.
REV:A
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