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CJ1012 Datasheet Preview

CJ1012 Datasheet

N-Channel Power MOSFET

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CJ1012
SOT-523 Plastic-Encapsulate MOSFETS
CJ1012 N-Channel Power MOSFET
General Description
This Single N-Channel MOSFET has been designed using advanced
Power Trench process to optimize the RDS(ON).
FEATURE
High-Side Switching
Low On-Resistance
Low Threshold
Fast Switching Speed
ESD protected up to 2KV
SOT-523
1. GATE
2. SOURCE
3. DRAIN
APPLICATIONS
Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current -Pulsed(note1)
Power Dissipation (note 2 , Ta=25)
Maximum Power Dissipation (note 3 , Tc=25)
Thermal Resistance from Junction to Ambient
Thermal Resistance from Junction to Case
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
ID(DC)
IDM(pulse)
PD
RθJA
RθJC
Tj
Tstg
Value
20
±12
500
1000
150
275
833
455
150
-55 ~+150
Units
V
mA
mW
/W
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ZPSEMI

CJ1012 Datasheet Preview

CJ1012 Datasheet

N-Channel Power MOSFET

No Preview Available !

CJ1012
Electrical characteristics (Ta=25unless otherwise noted)
Parameter
Symbol
Test Condition
On/Off States
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(on)
gFS
VGS = 0V, ID =250µA
VDS =VGS, ID =250µA
VDS =0V, VGS =±4.5V
VDS =16V, VGS =0V
VGS =4.5V, ID =600mA
VGS =2.5V, ID =500mA
VDS =10V, ID =400mA
Dynamic Characteristics
Input Capacitance (note 4)
Output Capacitance (note 4)
Reverse Transfer Capacitance (note 4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Ciss
Coss VDS =16V,VGS =0V,f =1MHz
Crss
Qg
VDS =10V,VGS =4.5V,
Qgs ID =250mA
Qgd
Switching Times (note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD=10V,
RL=47, ID=200mA,
VGS=4.5V,RG=10
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage (note 5)
VSD IS=0.15A, VGS = 0V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at Ta=25.
3. This test is performed with infinite heat sink at Tc=25.
4.These parameters have no way to verify.
5. Pulse Test : Pulse Width300µs, Duty Cycle0.5%.
Min Typ Max Unit
20
V
0.45 1.2
±1 µA
100 nA
700
m
850
1S
100
16 pF
12
750
75 nC
225
5
5
nS
25
11
1.2 V
sales@zpsemi.com
www.zpsemi.com
2 of 3


Part Number CJ1012
Description N-Channel Power MOSFET
Maker ZPSEMI
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CJ1012 Datasheet PDF






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