� 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Low Crss (typical 3.62pF ) � Fast switching � 100% avalanche tested � Improved dv/dt capability � Maximum Junction Temperature Rang.

Silicon N-Channel MOSFET Features � 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Low Crss (typical 3.62pF ) � Fast switching � 100% avalanche tested � Improved dv/dt capability � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET .

WFU5N60

WFU5N60B

WFU5N50

WFU1N60

WFU1N60C

WFU1N60N

WFU1N80

WFU20N06

WFU2N60

WFU2N60B

WFU2N65L

WFU430

WFU4N60

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