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WFU1N60N - Silicon N-Channel MOSFET

General Description

Th is Power MO SFET is pro du ced using Winsemi ’s ad van ced planar stripe, VDMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

  • 1A,600V, RDS(on)(Max 15.0Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 6.1nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFU1N60N
Manufacturer Winsemi
File Size 650.58 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFU1N60N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr U1N6 0N WF WFU1N6 U1N60 Silicon N-Ch annel MOS FET Cha OSF Features ■1A,600V, RDS(on)(Max 15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description Th is Power MO SFET is pro du ced using Winsemi ’s ad van ced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS.