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B WFU5N60 5N60B
Silicon N-Channel MOSFET
Features
� � � � � 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well full bridge resonant topology line a mode power
suited for half bridge and
electronic lamp ballast, high efficiency switched supplies, active power factor correction.
WFU5N60B Datasheet
