WFU5N50 mosfet equivalent, silicon n-channel mosfet.
* 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V
* Ultra-low Gate Charge(Typical 32nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Tempera.
Th is Power MO SFET is pro du ced usi ng Wins e mi ’s ad van ced plana r stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugge d avalanche chara ct er istics. This devices is s.
Image gallery
TAGS
Download (Size : 794.88KB)