WFU2N65L mosfet equivalent, silicon n-channel mosfet.
� 2A,650V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 8nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
Ge.
Silicon N-Channel MOSFET
Features
� 2A,650V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 8nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produc.
Image gallery
TAGS
Download (Size : 278.12KB)