WFU2N60B mosfet equivalent, silicon n-channel mosfet.
� � � � � 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
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This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well s.
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