WFU20N06 - Silicon N-Channel MOSFET

Winsemi

Description

This Power MO S FE T is produced using W in se m i ’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

This devices is specially well suited for high efficiency switch mode power supply.

Features

20A,60V, RDS(on)(Max 39mΩ)@VGS=10V.
Ultra-low Gate Charge(Typical 6.1nC).
High Current Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) General.

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WFU20N06 silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFU20N06
Manufacturer	Winsemi
File Size	595.30 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFU20N06 Datasheet

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Full PDF Text Transcription (Reference)

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WFU20N06 Silicon N-Channel MOSFET Features ■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MO S FE T is produced using W in se m i ’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS.