WFU20N06 mosfet equivalent, silicon n-channel mosfet.
* 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V
* Ultra-low Gate Charge(Typical 6.1nC)
* High Current Capability
* 100%Avalanche Tested
* Maximum Junction Temper.
This Power MO S FE T is produced using W in se m i ’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for.
Image gallery
TAGS
Download (Size : 595.30KB)