WFP640 mosfet equivalent, silicon n-channel mosfet.
� 18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V � Ultra-low Gate Charge(Typical 45nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation voltage(VISO=4000V AC) � Maximu.
such as automotive, high efficiency switching for DC/DC converters,and DC motor control.
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This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well su.
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