WFP650 datasheet, mosfet equivalent, WINSEMI SEMICONDUCTOR

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Features and benefits

� � � � � � 28A, 200v, RDS(on)=0.085Ω @VGS=10V Low gate charge (typical 95 nC) Low crss (typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability Ge.

Description

These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary , planar,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching Perf.

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