WFP10N60 mosfet equivalent, silicon n-channel mosfet.
� � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improv.
This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a highrugged avalanche characteristics. This devices is specially wellsuit.
Image gallery
TAGS
Download (Size : 724.75KB)