� 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V � Ultra-low Gate charge(Typical 43nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) .

in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching tra.

This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared with standard parts from various sources. All of these power MOSFETs are designed for applications in switching regulators, s.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts