WFP630 mosfet equivalent, silicon n-channel mosfet.
* 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V
* Ultra-low Gate Charge(Typical 22nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Temp.
such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
G D S
TO220
Absolute Maximu.
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well s.
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