WFN1N60 mosfet equivalent, silicon n-channel mosfet.
� � � � � 1.3A,600V, RDS(on)(Max8.5Ω)@VGS=10V Ultra-low Gate charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃).
Th is Power MO SFET is produced using Winse mi’s advan ced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state
resistance, have a high rugged avalanche characteristics. This devices is specially .
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