WFN1N60C mosfet equivalent, power mosfet.
� 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃).
Th is Power MO SFET is produced using Winse mi’s advan ced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially w.
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