WFN1N60NC mosfet equivalent, silicon n-channel mosfet.
*0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V
* Ultra-low Gate Charge(Typical 6.1nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Temp.
This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well .
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