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WFN1N60NC - Silicon N-Channel MOSFET

Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • 0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 6.1nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet preview – WFN1N60NC

Datasheet Details

Part number WFN1N60NC
Manufacturer Winsemi
File Size 673.59 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFN1N60NC Datasheet
Additional preview pages of the WFN1N60NC datasheet.

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Full PDF Text Transcription

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WFN1N60NC Silicon N-Channel MOSFET Features ■0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS.
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