WFD4N65S mosfet equivalent, power mosfet.
� Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS compliant
General Description
Power MOSFET is fabricated using advanced super junction.
which require superior power density and outstanding efficiency.
Absolute Maximum Ratings
Symbol
VDSS
Drain Source V.
650V Super-Junction Power MOSFET
Features
� Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS compliant
General Description
Power MOSFET is fabricated using advanced super junction technology. The resulting device has .
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