WFD5N50 mosfet equivalent, silicon n-channel mosfet.
* 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V
* Ultra-low Gate Charge(Typical 32nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Tempera.
This Power MO SFET is pro du ced using Winse mi ’s ad van ced plana r stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche charact er istics. This devices is spe ci.
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