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WFD5N50 - Silicon N-Channel MOSFET

General Description

This Power MO SFET is pro du ced using Winse mi ’s ad van ced plana r stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche charact er istics.

Key Features

  • 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 32nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) WFD5N50 Silicon N-Channel MOSFET General.

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Datasheet Details

Part number WFD5N50
Manufacturer Winsemi
File Size 739.29 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFD5N50 Datasheet

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Full PDF Text Transcription for WFD5N50 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for WFD5N50. For precise diagrams, tables, and layout, please refer to the original PDF.

Features ■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(...

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apability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) WFD5N50 Silicon N-Channel MOSFET General Description This Power MO SFET is pro du ced using Winse mi ’s ad van ced plana r stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche charact er istics. This devices is spe cially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.