WFD4N60B mosfet equivalent, power mosfet.
* 4A,600V.RDS(on)(Max 2.4Ω)@VGS=10V
* Ultra-low Gate Charge(Typical 16nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Isolation Voltage ( VIS.
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance, have a high Rugged avalanche characteristics. This devices is specially well Su.
Image gallery
TAGS
Download (Size : 506.08KB)