� 7A,650V,RDS(on)(TYP:1.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 21nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability General Descripti.

Silicon N-Channel MOSFET Features � 7A,650V,RDS(on)(TYP:1.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 21nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability General Description This Power MOSFET is produced using advance.

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