WFD7N65L Datasheet | WINSEMI

Description Silicon N-Channel MOSFET Features - 7A,650V,RDS(on)(TYP:1.0Ω)@VGS=10V - Ultra-low Gate Charge(Typical 21n C) - Fast Switching Capability - 100%Avalanche Tested - Improved dv/dt capability General Description This Power MOSFET is produced using advanced planar stripe,VDMOS technology. This technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge. Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS EAS EAR IAR dv/dt PD TJ,Tstg TL Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Avalanche Current Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Junction and Storage Temperature Channel Temperature Thermal Characteristics Symbol Parameter RQJC RQJA Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient (Note1) (Note2) (Note1) (Note1) (Note3) Value 650 7 3.2 28 ±30 232 12 7.5 10 40 -55~150 300 Units V A A A V m J m J A V/ ns W ℃ ℃ Value Units Min Typ Max - - 1.04 ℃/W - - 62.5 ℃/W WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WT-F152-Rev.A0...