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SI2323DS Datasheet

P-Channel 20-V (D-S) MOSFET

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New Product
P-Channel 20-V (D-S) MOSFET
Si2323DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
-20
rDS(on) (W)
0.039 @ VGS = -4.5 V
0.052 @ VGS = -2.5 V
0.068 @ VGS = -1.8 V
ID (A)
-4.7
- 4.1
- 3.5
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
D PA Switch
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2323DS (D3)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-20
$8
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
- 4.7
-3.8
-1.0
1.25
0.8
-20
-55 to 150
-3.7
-2.9
-0.6
0.75
0.48
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 72024
S-22121β€”Rev. B, 25-Nov-02
Symbol
RthJA
RthJF
Typical
75
120
40
Maximum
100
166
50
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI2323DS Datasheet

P-Channel 20-V (D-S) MOSFET

No Preview Available !

Si2323DS
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
Turn-On Time
Turn-Off Time
Symbol
Test Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = -250 mA
VDS = VGS, ID = -250 mA
VDS = 0 V, VGS = "8 V
VDS = -16 V, VGS = 0 V
VDS = -16 V, VGS = 0 V, TJ = 55_C
VDS v -5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -4.7 A
VGS = -2.5 V, ID = -4.1 A
VGS = -1.8 V, ID = -2.0 A
VDS = -5 V, ID = -4.7 A
IS = -1.0 A, VGS = 0 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = -10 V, VGS = -4.5 V
ID ^ -4.7 A
VDS = -10 V, VGS = 0, f = 1 MHz
td(on)
tr
td(off)
tf
VDD = -10 V, RL = 10 W
ID ^ -1.0 A, VGEN = -4.5 V
RG = 6 W
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Min
-20
-0.40
-20
Limits
Typ
Max
0.031
0.041
0.054
16
0.7
-1.0
"100
-1
-10
0.039
0.052
0.068
-1.2
12.5
1.7
3.3
1020
191
140
19
25 40
43 65
71 110
48 75
Unit
V
nA
mA
A
W
S
V
nC
pF
ns
www.vishay.com
2
Document Number: 72024
S-22121β€”Rev. B, 25-Nov-02


Part Number SI2323DS
Description P-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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