900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SI2320DS Datasheet

N-Channel 200-V (D-S) MOSFET

No Preview Available !

New Product
Si2320DS
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
200 7 @ VGS = 10 V
ID (A)
"0.28
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2320DS (D0)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Currentb
Avalanche Currentb
Single Avalanche Energy
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
L = 0.1 mH
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
"200
"20
"0.28
"0.22
"0.22
"0.17
"0.5
"0.5
0.013
"1
1.25
0.75
0.80
0.48
–55 to 150
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71084
S-63640—Rev. A, 01-Nov -98
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
75
120
40
Maximum
100
166
50
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1


Vishay Intertechnology Electronic Components Datasheet

SI2320DS Datasheet

N-Channel 200-V (D-S) MOSFET

No Preview Available !

Si2320DS
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Symbol
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamicb
ID(on)
rDS(on)
gfs
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Source-Drain Reverse Recovery Time
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
Test Conditions
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 160 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 70_C
VDS w 15 V, VGS = 10 V
VGS = 10 V, ID = 0.2 A
VDS = 15 V, ID = 0.4 A
IS = 1 A, VGS = 0 V
VDS = 100 V, VGS = 10 V, ID = 0.2 A
VDD = 100 V, RL = 500 W
ID ^ 0.2 A, VGEN = 10 V, RG = 6 W
IF = 1 A, di/dt = 100 A/ms
Limits
Min Typ Max
Unit
200
V
2
"100
nA
1
mA
75
0.5 A
5.8 7
13
1.2
W
S
V
1.1
0.31
0.375
1.6
nC
6 10
9 15
9 15
65 100
105 160
ns
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.0
VGS = 10, 9 V
0.8 8 V
1.0
0.8
7V
0.6 0.6
Transfer Characteristics
0.4
0.2
0
0
6V
4, 3 V
5V
2468
VDS – Drain-to-Source Voltage (V)
10
www.vishay.com S FaxBack 408-970-5600
2-2
0.4
0.2
0
0
TC = 125_C
25_C
–55_C
2468
VGS – Gate-to-Source Voltage (V)
10
Document Number: 71084
S-63640—Rev. A, 01-Nov -98


Part Number SI2320DS
Description N-Channel 200-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
PDF Download

SI2320DS Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SI2320DS N-Channel 200-V (D-S) MOSFET
Vishay Siliconix





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy