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BLUE ROCKET ELECTRONICS

SI2321 Datasheet Preview

SI2321 Datasheet

P-CHANNEL MOSFET

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SI2321
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 P MOS 场效应管。P- CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
沟道场效应管。
Trench FET Power MOSFET.
用途 / Applications
高速开关。
High speed switch.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1S
PIN 2G
PIN 3D
印章代码 / Marking
Marking
HD1
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BLUE ROCKET ELECTRONICS

SI2321 Datasheet Preview

SI2321 Datasheet

P-CHANNEL MOSFET

No Preview Available !

SI2321
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Pulsed Drain Current
Power Dissipation
Storage Temperature Range
Junction-to-Ambient
符号
Symbol
VDSS
VGSS
ID
IDM
PD
Tstg
RθJA
数值
Rating
-20
±12
-4.3
-15
1.25
-55150
140
单位
Unit
V
V
A
A
W
/W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Static Drain–Source
On–Resistance
Zero Gate Voltage Drain Current
Gate–Body Leakage.
Drain–Source Diode Forward
Voltage
Forward Transconductance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
符号
Symbol
V(BR)DSS
VGS(th)
RDS(on)1
RDS(on)2
RDS(on)3
IDSS(1)
IDSS(2)
IGSS
VSD
gFS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
测试条件
Test Conditions
VGS=0V
ID=-10μA
VDS=VGS
ID=-250μA
VGS=-4.5V ID=-4.3A
VGS=-2.5V ID=-2.5A
VGS=-1.8V ID=-1.3A
VDS=16V
VDS=16V
Tj=55
VGS=0V
VGS=0V
VGS=±12V VDS=0V
最小值
Min
-20
-0.4
典型值
Typ
44
61
84
IS=-1.6A
VGS=0V
VDS=-5V
VDS=-6V
ID-3.3A
ID=-3.3A
VGS=-4.5V
3
8
1.2
2.2
VDS=-6V
F=1MHZ
VGS=0
715
170
120
VDD=-6V
RL=6
VGEN=-4.5V ID-1A
RG=6
15
35
60
40
最大值
Max
-1.0
57
76
110
-1
-10
±100
-1.2
13
25
55
90
60
单位
Unit
V
V
m
μA
μA
nA
V
S
nC
pF
ns
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Part Number SI2321
Description P-CHANNEL MOSFET
Maker BLUE ROCKET ELECTRONICS
Total Page 7 Pages
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