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SI2321DS Datasheet

P-Channel 20-V (D-S) MOSFET

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New Product
P-Channel 20-V (D-S) MOSFET
Si2321DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 20
rDS(on) (W)
0.057 @ VGS = - 4.5 V
0.076 @ VGS = - 2.5 V
0.110 @ VGS = - 1.8 V
ID (A)
- 3.3
- 2.8
- 2.3
FEATURES
D TrenchFETr Power MOSFETS
APPLICATIONS
D Load Switch
D PA Switch
TO-236
(SOT-23)
G1
S2
3D
Ordering Information: Si2321DS-T1
Top View
Si2321DS *(D1)
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Currenta
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 3.3
- 2.6
- 0.74
0.89
0.57
- 20
"8
- 12
- 55 to 150
- 2.9
- 2.3
- 0.59
0.71
0.45
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
t  5 sec.
Steady State
RthJA
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
Notes
a. Surface Mounted on FR4 Board.
b. t v5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72210
S-03986—Rev. A, 19-May-03
Typical
115
140
60
Maximum
140
175
75
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI2321DS Datasheet

P-Channel 20-V (D-S) MOSFET

No Preview Available !

Si2321DS
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingb
Turn-On Time
Turn-Off Time
Symbol
Test Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = - 10 mA
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "8 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 55_C
VDS v - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 3.3 A
VGS = - 2.5 V, ID = - 2.8 A
VGS = - 1.8 V, ID = - 2.3 A
VDS = - 5 V, ID = - 3.3 A
IS = - 1.6 A, VGS = 0 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = - 6 V, VGS = - 4.5 V
ID ^ - 3.3 A
VDS = - 6 V, VGS = 0, f = 1 MHz
td(on)
tr
td(off)
tf
VDD = - 6 V, RL = 6 W
ID ^ - 1.0 A, VGEN = - 4.5 V
RG = 6 W
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
Min
- 20
- 0.40
-6
Limits
Typ
Max
0.044
0.061
0.084
3
- 0.90
"100
-1
- 10
0.057
0.076
0.110
- 1.2
8 13
1.2
2.2
715
170
120
15 25
35 55
60 90
40 60
Unit
V
nA
mA
A
W
S
V
nC
pF
ns
www.vishay.com
2
Document Number: 72210
S-03986—Rev. A, 19-May-03


Part Number SI2321DS
Description P-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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