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VB40M120C Datasheet, Vishay

VB40M120C rectifier equivalent, dual high-voltage trench mos barrier schottky rectifier.

VB40M120C Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 682.15KB)

VB40M120C Datasheet

Features and benefits

Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* Hig.

Application

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MEC.

Image gallery

VB40M120C Page 1 VB40M120C Page 2 VB40M120C Page 3

TAGS

VB40M120C
Dual
High-Voltage
Trench
MOS
Barrier
Schottky
Rectifier
Vishay

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